Gallium nitride (GaN) is a very hard and stable wide-band-gap semiconductor material in mechanical. Due to higher breakdown strength, faster switching, higher thermal conductivity and lower on-resistance, GaN-based power devices are significantly superior to silicon-based devices. Production facilities, and use large-diameter silicon wafers at low cost.
GaN is used to manufacture semiconductor power devices, such as mobile phones and computer chargers. GaN technology has shown that it can replace silicon-based semiconductor technology in power conversion, radio frequency and analog applications.
The leading candidate raw material for elevating electronic performance to a higher level and reviving Moore's Law is GaN. It has been confirmed that the efficiency of conducting electrons by GaN is 1000 times more than silicon-based devices. The technological development of silicon-based devices has reached its limit, and a new semiconductor material GaN with higher performance is emerging.
The GaN era is constantly moving forward.
Gallium nitride materials promote the emergence of higher-performance transistors and integrated circuits. Now it is the best time for innovative power engineers to utilize various advantages of GaN devices in their designs which includes
- Lower on-resistance to achieve lower conduction loss
- Faster switching devices to lower switching losses
- Smaller capacitors to achieve lower loss while charging or discharging device
- Less power needed to drive the circuit
- Smaller devices to reduce occupied area on printed circuit board